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RA13H8891MA Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # RA13H8891MA
Description  RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA13H8891MA Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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<Silicon RF Power Modules >
RA13H8891MA
RoHS Compliance ,
889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date : Jul.2011
4
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
0
5
10
15
20
25
30
2
2.5
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=880MHz,
VDD=12.5V,
Pin=200mW
IDD
0
5
10
15
20
25
30
35
40
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
1
2
3
4
5
6
7
8
Pout
f=915MHz,
VGG=5V,
Pin=200mW
IDD
0
5
10
15
20
25
30
2
2.5
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=900MHz,
VDD=12.5V,
Pin=200mW
IDD
0
5
10
15
20
25
30
2
2.5
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=915MHz,
VDD=12.5V,
Pin=200mW
IDD
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)


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