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RA13H8891MA Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # RA13H8891MA
Description  RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA13H8891MA Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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<Silicon RF Power Modules >
RA13H8891MA
RoHS Compliance ,
889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date : Jul.2011
3
OUTPUT POWER, TOTAL EFFICIENCY,
2
nd, 3
rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
875
885
895
905
915
FREQUENCY f(MHz)
0
20
40
60
80
100
120
VDD=12.5V
Pin=200mW
Pout @VGG=5V
T @Pout=13W
in @Pout=13W
0
10
20
30
40
50
0
5
10
15
20
25
INPUT POWER Pin(dBm)
0
1
2
3
4
5
f=880MHz,
VDD=12.5V,
VGG=5V
Pout
IDD
Gp
0
10
20
30
40
50
0
5
10
15
20
25
INPUT POWER Pin(dBm)
0
1
2
3
4
5
f=900MHz,
VDD=12.5V,
VGG=5V
Pout
Gp
IDD
-70
-60
-50
-40
-30
-20
875
885
895
905
915
FREQUENCY f(MHz)
VDD=12.5V
Pin=200mW
2
nd @P
out=13W
3
rd
@Pout=13W
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
0
5
10
15
20
25
30
35
40
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
1
2
3
4
5
6
7
8
Pout
f=880MHz,
VGG=5V,
Pin=200mW
IDD
0
10
20
30
40
50
0
5
10
15
20
25
INPUT POWER Pin(dBm)
0
1
2
3
4
5
f=915MHz,
VDD=12.5V,
VGG=5V
Pout
Gp
IDD
0
5
10
15
20
25
30
35
40
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
1
2
3
4
5
6
7
8
Pout
f=900MHz,
VGG=5V,
Pin=200mW
IDD
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)


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