Silicon RF Power Semiconductors

RoHS COMPLIANT

RA

RA

RA

RA03M3540

03M3540

03M3540

03M3540M

M

M

MD

D

D

D

RA03M3540MD

28 Jun 2010

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

Drain Voltage

9.2

V

Gate Voltage

4

V

Gate Voltage

4

V

Input Power

100

mW

Output Power

10

W

Operation Case Temperature Range

f=350-400MHz,

Ω

-30 to +90

°C

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

Ω, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

350

-

400

MHz

Output Power

Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.)

38

-

-

dBm

Total Efficiency

35

-

-

%

2

-

-

-25

dBc

Input VSWR

-

-

4.4:1

—

Gate Current

Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.)

-

1

-

mA

IMD3

3

Distortion

-

-

-25

dBc

IMD5

5

Distortion

Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.) ,

Two tone test at 1KHz separation

-

-

-25

dBc

GV

Gain Variation

Across specified frequency range

Idq1=20mA(Vgg1 adjust.),

Idq2=1A(Vgg2 adjust.)

0

-

4

dB

—

Stability

Vdd=6.0/7.2/9.2V,

Idq1=20mA(Vgg1 adjust),

Idq2=1A(Vgg2 adjust) ,

Po(Single Carrier)=15-38dBm(Pin control)

LOAD VSWR=2:1(All Phase),Zg=50

Ω

No parasitic oscillation

—

—

Load VSWR Tolerance

LOAD VSWR=2:1(All Phase),Zg=50Ω,

Idq1=20mA(Vgg1 adjust.@Vdd=7.2V),

Idq2=1A(Vgg2 adjust.@Vdd=7.2V)

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.