PS21963-4ES_09 datasheet(3/8 Pages) MITSUBISHI

Part #	PS21963-4ES

Description	Dual-In-Line Package Intelligent Power Module

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4ES

TRANSFER-MOLD TYPE

INSULATED TYPE

Mar. 2007

3

2.20

2.30

2.35

1.70

—

0.60

2.00

0.75

1

10

4.1

5.4

mA

V

Tj = 25°C

Tj = 125°C

IC = 8A, Tj = 25°C

IC = 8A, Tj = 125°C

VCE(sat)

VEC

ton

trr

tc(on)

toff

tc(off)

ICES

Condition

Symbol

Parameter

Limits

Inverter IGBT part (per 1/6 module)

Inverter FWD part (per 1/6 module)

Rth(j-c)Q

Rth(j-c)F

Min.

THERMAL RESISTANCE

Typ.

Max.

—

Unit

Tj = 25°C, –IC = 8A, VIN = 0V

Condition

Symbol

Parameter

Limits

Min.

Typ.

Max.

—

0.60

—

Unit

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Collector-emitter saturation

voltage

FWD forward voltage

Junction to case thermal

resistance

(Note 3)

VD = VDB = 15V

VIN = 5V

Switching times

VCC = 300V, VD = VDB = 15V

IC = 8A, Tj = 125°C, VIN = 0 ↔ 5V

Inductive load (upper-lower arm)

Collector-emitter cut-off

current

VCE = VCES

1.70

1.80

1.90

1.10

0.30

0.40

1.40

0.40

—

V

µs

°C/W

CONTROL (PROTECTION) PART

Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is

less than 1.7 times of the current rating.

5: Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure.

Symbol

ID

VFOH

VFOL

VSC(ref)

IIN

UVDBt

UVDBr

UVDt

UVDr

tFO

Vth(on)

Vth(off)

Vth(hys)

Parameter

Condition

Limits

Unit

Circuit current

Fault output voltage

Short circuit trip level

Control supply under-voltage

protection

Fault output pulse width

ON threshold voltage

OFF threshold voltage

ON/OFF threshold hysteresis

voltage

VD = VDB = 15V

VIN = 5V

Total of VP1-VNC, VN1-VNC

VUFB-U, VVFB-V, VWFB-W

VSC = 0V, FO terminal pull-up to 5V by 10kΩ

VSC = 1V, IFO = 1mA

Tj = 25°C, VD = 15V

(Note 4)

VIN = 5V

Trip level

Reset level

Trip level

Reset level

(Note 5)

Applied between UP, VP, WP, UN, VN, WN-VNC

—

4.9

—

0.43

0.70

10.0

10.5

10.3

10.8

20

—

0.8

0.35

—

0.48

1.00

—

2.1

1.3

0.65

2.80

0.55

2.80

0.55

—

0.95

0.53

1.50

12.0

12.5

13.0

—

2.6

—

Min.

Typ.

Max.

mA

V

mA

V

µs

V

VD = VDB = 15V

VIN = 0V

Total of VP1-VNC, VN1-VNC

VUFB-U, VVFB-V, VWFB-W

Tj ≤ 125°C

Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM

and heat-sink.

The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal

conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and

the thermal conductivity is 1.0W/m·k.

Input current

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