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CXK5V8512TM- Datasheet(PDF) 3 Page - Sony Corporation

Part No. CXK5V8512TM-
Description  65536-word X 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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– 3 –
CXK5V8512TM
Input leakage current
Output leakage current
Operating power supply
current
ILI
ILO
ICC1
VIN = GND to VCC
CE1 = VIH or CE2 = VIL or
OE = VIH or WE = VIL
VI/O = GND to VCC
CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA
85LLX
10LLX
–25 to +85°C
–25 to +70°C
+25°C
–1
–1
5
10
0.24
0.12
14
7
1.4
µA
mA
1
30
25
+1
+1
3
40
35
µA
µA
mA
mA
mA
Item
Symbol
Min.
Typ.∗
Max.
Unit
Test conditions
Electrical Characteristics
• DC Characteristics
(VCC = 3.3V ± 0.3V, GND = 0V, Ta = –25 to +85°C)
∗ V
CC
= 3.3V, Ta = 25°C
Average operating current
Output high voltage
Output low voltage
Standby current
ICC2
ICC3
ISB1
ISB2
VOH
VOL
Min. cycle
duty = 100%
IOUT = 0mA
Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1
≤ 0.2V
CE2
≥ Vcc – 0.2V
VIL
≤ 0.2V
VIH
≥ Vcc – 0.2V
CE1 = VIH or CE2 = VIL
IOL = 2.0mA
2.4
0.4
V
V
IOH = –2.0mA
CE2
≤ 0.2V
CE1
≥ Vcc – 0.2V
or
{
CE2
≥ Vcc – 0.2V




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