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STPS2545C-Y Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS2545C-Y Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 7 page Characteristics STPS2545C-Y 2/7 Doc ID 17260 Rev 2 1 Characteristics When the diodes 1 and 2 are used simultaneously: ΔT j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.012 x IF 2 (RMS) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5 Tc =160 °C Per diode 12.5 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 200 A IRRM Repetitive peak reverse current tp = 2 µs square F=1 kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 2A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 4800 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 °C dV/dt Critical rate of rise reverse voltage 10000 V/µs Table 3. Thermal resistances Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 1.6 °C/W Total 1.1 °C/W Rth (c) Coupling 0.6 °C/W Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM -- 125 µA Tj = 125 °C - 9 25 mA VF (1) Forward voltage drop Tj = 125 °C IF = 12.5 A - 0.50 0.57 V Tj = 25 °C IF = 25 A - - 0.84 Tj = 125 °C IF = 25 A - 0.65 0.72 dPtot dTj --------------- 1 Rth j a – () -------------------------- < |
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