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STPS2545C-Y Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS2545C-Y
Description  Automotive power Schottky rectifier
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS2545C-Y Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS2545C-Y
2/7
Doc ID 17260 Rev 2
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.012 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward current
δ = 0.5
Tc =160 °C Per diode
12.5
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
200
A
IRRM
Repetitive peak reverse current
tp = 2 µs square F=1 kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
2A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
4800
W
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to +175
°C
dV/dt
Critical rate of rise reverse voltage
10000
V/µs
Table 3.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per diode
1.6
°C/W
Total
1.1
°C/W
Rth (c)
Coupling
0.6
°C/W
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
125
µA
Tj = 125 °C
-
9
25
mA
VF
(1)
Forward voltage drop
Tj = 125 °C
IF = 12.5 A
-
0.50
0.57
V
Tj = 25 °C
IF = 25 A
-
-
0.84
Tj = 125 °C
IF = 25 A
-
0.65
0.72
dPtot
dTj
---------------
1
Rth j
a
()
--------------------------
<


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