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CXK5V8257BTM Datasheet(PDF) 4 Page - Sony Corporation

Part No. CXK5V8257BTM
Description  32768-word X 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5V8257BTM/BYM/BM
-70LL
-10LL
Item
Symbol
Unit
Min.
Max.
Min.
Max.
-70LL
-10LL
Item
Symbol
Unit
Min.
Max.
Min.
Max.
tRC
tAA
tCO
tOE
tOH
tLZ
tOLZ
tHZ1
tOHZ1
70
20
10
5
70
70
35
30
30
100
20
10
10
100
100
50
35
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
Chip enable access time (CE)
Output enable to output valid
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
tWC
tAW
tCW
tDW
tDH
tWP
tAS
tWR
tWR1
tOW
tWHZ2
70
60
60
30
0
55
0
0
0
10
30
100
80
80
35
0
60
0
0
0
10
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE)
Output active from end of write
Write to output in high Z
• Read cycle (WE = “H”)
1 t
HZ
and
tOHZ are defined as the time required for outputs to turn to high impedance state and are not
referred to as output voltage levels.
• Write cycle
2 t
WHZ
is defined as the time required for outputs to turn to high impedance state and is not referred to as
output voltage level.




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