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CXK5V8257BTM Datasheet(PDF) 3 Page - Sony Corporation

Part No. CXK5V8257BTM
Description  32768-word X 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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– 3 –
CXK5V8257BTM/BYM/BM
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
-70LL
-10LL
VIH = 2.0V
VIL = 0.8V
tr = 5ns
tf = 5ns
1.4V
CL2 = 30pF, 1TTL
CL2 = 100pF, 1TTL
Item
Conditions
TTL
CL
Output load
conditions
AC Characteristics
• AC test conditions (VCC = 3.3V ± 0.3V, Ta = 0 to +70°C)
2 C
L
includes scope and jig capacitances.
I/O capacitance
(Ta = 25°C, f = 1MHz)
Input capacitance
I/O capacitance
Item
Symbol Test condition
Min.
Typ.
Max.
Unit
CIN
CI/O
VIN = 0V
VI/O = 0V
8
10
pF
pF
Note) This parameter is sampled and is not 100% tested.
Electrical Characteristics
• DC characteristics
(VCC = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
Item
Symbol
Test Conditions
Min.
Typ.∗1
Max.
Unit
Input leakage current
Output leakage
current
Operating power
supply current
Average operating
current
Standby current
Output high
voltage
Output low
voltage
ILI
ILO
ICC1
ICC2
ISB1
ISB2
VOH
VOL
VIN = GND to VCC
CE = VIH,
OE = VIH or WE = VIL,
VI/O = GND to VCC
CE = VIL,
VIN = VIH or VIL,
IOUT = 0mA
Min. cycle,
Duty = 100%, IOUT = 0mA
CE
≥ VCC – 0.2V
CE = VIH
IOH = –2mA
IOL = 2.0mA
–0.5
–0.5
2.4
0.5
0.5
2
40
35
3.5
0.7
0.35
0.7
0.4
0.9
21
18
0.12
0.06
µA
µA
mA
mA
µA
mA
V
V
1 V
CC
= 3.3V, Ta = 25°C
70LL
10LL
0 to +70°C
0 to +40°C
+25°C




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