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CXK5T8257BTM Datasheet(PDF) 1 Page - Sony Corporation

Part No. CXK5T8257BTM
Description  32768-word X 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5T8257BTM/BYM/BM -10LLX/12LLX
PE96509-ST
32768-word
× 8-bit High Speed CMOS Static RAM
Description
The CXK5T8257BTM/BYM/BM is 262,144 bits high
speed CMOS static RAM organized as 32768-words
by 8 bits.
Special feature are low power consumption and
high speed.
The CXK5T8257BTM/BYM/BM is a suitable RAM
for portable equipment with battery back up.
Features
• Extended operating temperature range: –25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
(Access time)
3.0V operation
-10LLX
100ns (Max.)
-12LLX
120ns (Max.)
3.3V operation
-10LLX
85ns (Max.)
-12LLX
100ns (Max.)
• Low standby current: 7.0µA (Max.)
• Low power data retention: 2.0V (Min.)
• Available in many packages
CXK5T8257BTM/BYM
8mm
× 13.4mm 28 pin TSOP Package
CXK5T8257BM
450mil 28 pin SOP Package
Function
32768-word
× 8 bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXK5T8257BTM
28 pin TSOP (Plastic)
CXK5T8257BYM
28 pin TSOP (Plastic)
CXK5T8257BM
28 pin SOP (Plastic)
Memory
Matrix
512
× 512
I/O Gate
Column
Decoder
Row
Decoder
Buffer
Buffer
Buffer
I/O Buffer
VCC
GND
I/O1
I/O8
A14
A13
A12
A11
A9
A8
A7
A6
A5
A10
A4
A3
A2
A1
A0
OE
WE
CE
Block Diagram
Preliminary
For the availability of this product, please contact the sales office.




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