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ERJ-8GEYJ510 Datasheet(PDF) 1 Page - RF Micro Devices |
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ERJ-8GEYJ510 Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 10 page 1 of 10 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Functional Block Diagram RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Ordering Information BiFET HBT SOI RF IN VG Pin 1 (CUT ) G B GND BASE RF OUT VD Pin 2 T RFHA1025 280W GaN Wideband Pulsed Power Amplifier The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single pack- age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100 s to 1ms Pulse Width Integrated Matching Components for High Terminal Impedances 50V Operation Typical Performance Output Pulsed Power 280W Pulse Width 100 S, Duty Cycle 10% Small Signal Gain 17dB High Efficiency 55% -40°C to 85°C Operating Temperature Applications Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers DS120928 Package: Flanged Ceramic, 2-Pin RFHA1025 280W GaN Wideband Pulsed Power Amplifier RFHA1025S2 2-Piece sample bag RFHA1025SB 5-Piece bag RFHA1025SQ 25-Piece bag RFHA1025SR 50 Pieces on 7” short reel RFHA1025TR13 250 Pieces on 13” reel RFHA1025PCBA-410 Fully assembled evaluation board 0.96GHz to .215GHz;50V |
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