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800A820JT Datasheet(PDF) 2 Page - RF Micro Devices

Part # 800A820JT
Description  280W GaN WIDE-BAND PULSED POWER AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

800A820JT Datasheet(HTML) 2 Page - RF Micro Devices

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RFHA1020
DS120508
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)155
mA
Operational Voltage
55
V
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)-40 to +85
°C
Operating Junction Temperature (TJ)250
°C
Human Body Model
Class 1A
MTTF (TJ < 200°C)
MTTF (TJ < 250°C)
3.0E + 06
1.4E + 05
Hours
Thermal Resistance, Rth (junction
to case)
TC = 85°C, DC bias only
0.90
°C/W
TC = 85°C, 100s pulse, 10% duty
cycle
0.18
TC = 85°C, 1ms pulse, 10% duty
cycle
0.34
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J-C and TC = TCASE
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Recommended Operating Conditions
Drain Voltage (VDSQ)50
V
Gate Voltage (VGSQ)-8
-3
-2
V
Drain Bias Current
440
mA
Frequency of Operation
1200
1400
MHz
DC Functional Test
IG (OFF) – Gate Leakage
2
mA
VG = -8V, VD = 0V
ID (OFF) – Drain Leakage
2.5
mA
VG = -8V, VD = 50V
VGS (TH) – Threshold Voltage
-3.5
V
VD = 50V, ID = 40mA
VDS (ON) – Drain Voltage at High
Current
0.28
V
VG = 0V, ID = 1.5A
RF Functional Test
[1], [2]
Small Signal Gain
14
dB
f = 1200MHz, PIN = 30dBm
Power Gain
12.3
dB
f = 1200MHz, PIN = 41.7dBm
Input Return Loss
-8
- 5.5
dB
f = 1200MHz, PIN = 41.7dBm
Output Power
54
dBm
f = 1200MHz, PIN = 41.7dBm
Drain Efficiency
48
50
%
f = 1200MHz, PIN = 41.7dBm
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.


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