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CXK5T81000AYM Datasheet(PDF) 1 Page - Sony Corporation |
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CXK5T81000AYM Datasheet(HTML) 1 Page - Sony Corporation |
1 / 11 page – 1 – CXK5T81000ATM/AYM/AM -10LLX/12LLX PE96324-ST 131072-word × 8-bit High Speed CMOS Static RAM Description The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and high speed. The CXK5T81000ATM/AYM/AM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) • Low standby current: 28µA (Max.) • Low data retention current: 24µA (Max.) • Low voltage data retention: 2.0V (Min.) • Package line-up CXK5T81000ATM/AYM 8mm × 20mm 32 pin TSOP package CXK5T81000AM 525mil 32 pin SOP package Function 131072-word × 8-bit static RAM Structure Silicon gate CMOS IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. CXK5T81000ATM 32 pin TSOP (Plastic) CXK5T81000AYM 32 pin TSOP (Plastic) CXK5T81000AM 32 pin SOP (Plastic) VCC GND CE1 CE2 Row Decoder Buffer I/O Buffer A10 A11 A9 A8 A13 A15 A16 A14 A12 A7 A6 A5 A4 A3 A0 OE WE I/O Gate Column Decoder Memory Matrix 1024 × 1024 A1 A2 I/O1 I/O8 Buffer Buffer Block Diagram Preliminary For the availability of this product, please contact the sales office. |
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