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CXK5T81000ATN Datasheet(PDF) 2 Page - Sony Corporation

Part No. CXK5T81000ATN
Description  131072-word X 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5T81000ATN/AYN
Address input
Data input output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground
No connection
Symbol
Description
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature · time
VCC
VIN
VI/O
PD
Topr
Tstg
Tsolder
–0.5 to +4.6
–0.5∗1 to VCC + 0.5
–0.5∗1 to VCC + 0.5
0.7
–25 to +85
–55 to +150
235 · 10
V
V
V
W
°C
°C
°C · s
Item
Symbol
Rating
Unit
Absolute Maximum Ratings
(Ta = 25°C, GND = 0V)
1 V
IN
, VI/O = –3.0V Min. for pulse width less than 50ns.
Pin Description
A0 to A16
I/O1 to I/O8
CE1, CE2
WE
OE
VCC
GND
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
18
19
20
21
22
23
24
25
26
27
28
29
30
32
31
17
CXK5T81000ATN
(Standard Pinout)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
18
19
20
21
22
23
24
25
26
27
28
29
30
32
31
17
CXK5T81000AYN
(Mirror Image Pinout)
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CE1
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
OE
A10
CE1
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
A3
A4
A5
A6
A7
A12
A14
A16
NC
VCC
A15
CE2
WE
A13
A8
A9
A11
Pin Configuration (Top View)
H
×
L
L
L
×
L
H
H
H
×
×
H
L
×
×
×
H
H
L
Not selected
Not selected
Output disable
Read
Write
High Z
High Z
High Z
Data out
Data in
ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
CE1 CE2
OE
WE
Mode
I/O pin
VCC Current
Truth Table
× : “H” or “L”
DC Recommended Operating Conditions
(Ta = –25 to +85°C, GND = 0V)
2 V
IL
= –3.0V Min. for pulse width less than 50ns.
Supply voltage
Input high voltage
Input low voltage
Item
Symbol
Min.
VCC = 2.7 to 3.6V
VCC = 3.3V ± 0.3V
Typ.
Max.
Unit
VCC
VIH
VIL
2.7
2.4
–0.3∗2
3.3
3.6
VCC + 0.3
0.4
Min.
Typ.
Max.
3.0
2.2
–0.3∗2
3.3
3.6
VCC + 0.3
0.6
V




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