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RFHA1020SB Datasheet(PDF) 1 Page - RF Micro Devices |
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RFHA1020SB Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 10 page 1 of 10 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Functional Block Diagram RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Ordering Information BiFET HBT RF IN VG Pin 1 (CUT) RF OUT VD Pin 2 GND BASE RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single pack- age. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100 s to 1ms Pulse Width Integrated Matching Components for High Terminal Impedances 50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100 s, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature Applications Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers RFHA1020S2 2-Piece sample bag RFHA1020SB 5-Piece bag RFHA1020SQ 25-Piece bag RFHA1020SR 50 Pieces on 7” short reel RFHA1020TR13 250 Pieces on 13” reel RFHA1020PCBA-410 Fully assembled evaluation board 1.2GHz to 1.4GHz; 50V operation DS120508 Package: Flanged Ceramic, 2 Pin |
Similar Part No. - RFHA1020SB |
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Similar Description - RFHA1020SB |
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