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RF3934TR7 Datasheet(PDF) 2 Page - RF Micro Devices

Part # RF3934TR7
Description  120W GaN WIDEBAND POWER AMPLIFIER
Download  14 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3934TR7 Datasheet(HTML) 2 Page - RF Micro Devices

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RF3934
DS120306
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)78
mA
Operational Voltage
65
V
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)-40 to +85
°C
Operating Junction Temperature (TJ)200
°C
Human Body Model
Class 1A
MTTF (TJ < 200°C, 95% Confidence Limits)*
3 x 106
Hours
Thermal Resistances, RTH (junction to case)
measured at TC=85°C, DC bias only
1.6
°C/W
*MTTF - median time to failure for wear-out failure mode (30% IDSS
degradation) which is determined by the technology process reliability. Refer
to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table
below.
Bias Conditions should also satisfy the following expression:
PDISS < (TJ - TC) / RTH J-C and TC = TCASE
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Recommended Operating Conditions
Drain Voltage (VDSQ)28
48
V
Gate Voltage (VGSQ)
-4.5
-3.7
-2.5
V
Drain Bias Current
440
mA
Frequency of Operation
DC
3500
MHz
Capacitance
CRSS
9pF
VG= - 8V, VD = OV
CISS
40
pF
VG= - 8V, VD = OV
COSS
27.5
pF
VG= - 8V, VD = OV
DC Functional Test
IG (OFF) - Gate Leakage
2
mA
VG = - 8V, Vd = OV
ID (OFF) - Drain Leakage
2.5
mA
VG = - 8V, Vd = 48V
VGS (TH) - Threshold Voltage
-4.2
V
VD = 48V, ID = 20mA
VDS (ON) - Drain Voltage at high current
0.25
V
VG = OV, ID = 1.5A
RF Functional Test
VGSQ
-3.4
V
VD = 48V, ID = 440mA
Gain
10
12
dB
CW, POUT = 50.8dBm, f = 2140MHz
Drain Efficiency
55
60
%
CW, POUt = 50.8dBm, f = 2140MHz
Input Return Loss
-12
dB
CW, POUT = 50.8dBm, f = 2140MHz
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.


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