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ERJ-8GEYJ100V Datasheet(PDF) 7 Page - RF Micro Devices |
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ERJ-8GEYJ100V Datasheet(HTML) 7 Page - RF Micro Devices |
7 / 14 page 7 of 14 RF3933 DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 0 10 20 30 40 50 60 70 80 14 15 16 17 18 19 20 21 22 30 35 40 45 50 55 Pout, Output Power (dBm) Gain/ Efficiency vs. Pout, f = 900MHz (CW, Vd = 48V, Idq = 300mA) Gain Eff 0 10 20 30 40 50 60 70 80 15 16 17 18 19 20 21 22 23 30 35 40 45 50 55 Pout, Output Power (dBm) Gain/ Efficiency vs. Pout, f = 900MHz (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 300mA) Gain Drain Eff -45 -40 -35 -30 -25 -20 0 0 1 0 1 1 Pout, Output Power (W-PEP) IMD3 vs. Pout (2-Tone 1MHz Separa on, Vd = 48V, Idq varied, fc = 900MHz) 260mA 300mA 330mA 370mA 20 20.2 20.4 20.6 20.8 21 21.2 21.4 21.6 21.8 22 0 0 1 0 1 1 Pout, Output Power (W-PEP) Gain vs. Pout (2-Tone 1MHz Separa on, Vd = 48V, Idq varied, fc = 900MHz) 260mA 300mA 330mA 370mA -70 -60 -50 -40 -30 -20 -10 0 0 0 1 0 1 1 Pout, Output Power (W- PEP) IMD vs. Output Power (Vd = 48V, Idq = 300mA, f1 = 899.5MHz, f2 = 900.5MHz) -IMD3 IMD3 -IMD5 IMD5 -IMD7 IMD7 |
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