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CXK5T81000ATM Datasheet(PDF) 1 Page - Sony Corporation

Part No. CXK5T81000ATM
Description  131072-word x 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5T81000ATM/AYM/AM -10LLX/12LLX
PE96324-ST
131072-word
× 8-bit High Speed CMOS Static RAM
Description
The CXK5T81000ATM/AYM/AM is a high speed
CMOS static RAM organized as 131072-words by
8-bits.
Special feature are low power consumption and
high speed.
The CXK5T81000ATM/AYM/AM is a suitable RAM
for portable equipment with battery back up.
Features
• Extended operating temperature range:
–25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
(Access time)
3.0V operation -10LLX
100ns
(Max.)
-12LLX
120ns
(Max.)
3.3V operation -10LLX
85ns
(Max.)
-12LLX
100ns
(Max.)
• Low standby current:
28µA
(Max.)
• Low data retention current: 24µA
(Max.)
• Low voltage data retention:
2.0V
(Min.)
• Package line-up
CXK5T81000ATM/AYM
8mm
× 20mm 32 pin TSOP package
CXK5T81000AM
525mil 32 pin SOP package
Function
131072-word
× 8-bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXK5T81000ATM
32 pin TSOP (Plastic)
CXK5T81000AYM
32 pin TSOP (Plastic)
CXK5T81000AM
32 pin SOP (Plastic)
VCC
GND
CE1
CE2
Row
Decoder
Buffer
I/O Buffer
A10
A11
A9
A8
A13
A15
A16
A14
A12
A7
A6
A5
A4
A3
A0
OE
WE
I/O Gate
Column
Decoder
Memory
Matrix
1024
× 1024
A1
A2
I/O1
I/O8
Buffer
Buffer
Block Diagram
Preliminary
For the availability of this product, please contact the sales office.




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