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GRM55ER72A475KA01L Datasheet(PDF) 1 Page - RF Micro Devices |
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GRM55ER72A475KA01L Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 14 page 1 of 14 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Functional Block Diagram RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Ordering Information BiFET HBT LDMOS RF IN VGQ Pin 1 (CUT) RF OUT VDQ Pin 2 GND BASE RF3933 90W GaN WIDE-BAND POWER AMPLIFIER The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scien- tific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad fre- quency range in a single amplifier design. The RF3933 is an unmatched GaN tran- sistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissi- pation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wide- band gain and power performance in a single amplifier. Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical Performance: • Output Power 90W at P3dB • Drain Efficiency 75% at P3dB • -40°C to 85°C Operation Applications Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific and Medical RF3933S2 2-piece sample bag RF3933SB 5-piece bag RF3933SQ 25-piece bag RF3933SR 100 pieces on 7” short reel RF3933TR7 750 pieces on 7” reel RF3933PCK-411 Fully assembled evaluation board optimized for 2.14GHz; 48V DS120306 Package: Hermetic 2-Pin Flanged Ceramic |
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