0807SQ-22N_LC datasheet(10/11 Pages) RFMD

10 / 11 page

10 of 11

RF3928

DS120508

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Evaluation Board Layout

Device Impedances

Frequency (MHz)

Z Source (

)

Z Load (

)

2800

60.4 – j0.5

42.1 – j30.5

3000

51.9 – j13.5

33.8 – j25.7

3200

44.1 – j16.5

29.5 – j8.9

3400

38.3 – j16.7

17.0 – j9.0

NOTE: Device impedances reported are the measured evaluation board impedances chosen for a trade off of peak power, peak efficiency and

gain performance across the entire frequency bandwidth.

Similar Part No. - 0807SQ-22N_LC

Manufacturer	Part #	Datasheet	Description
RF Micro Devices	0807SQ-22N_LC	773Kb / 11P	380W GaN WIDEBAND PULSED

Manufacturer	Part #	Datasheet	Description
RF Micro Devices	RFHA1025	871Kb / 10P	280W GaN Wideband Pulsed Power Amplifier
	RFHA1020	745Kb / 10P	280W GaN WIDE-BAND PULSED POWER AMPLIFIER
	RF3928B	773Kb / 11P	380W GaN WIDEBAND PULSED
	RFHA1023	1Mb / 10P	225W GaN Wideband Pulsed Power Amplifier
M/A-COM Technology Solu...	MAGX-000035-05000P	1Mb / 9P	GaN Wideband 50 W Pulsed Transistor in Plastic Package
	MAGX-000035-01500P	1Mb / 10P	GaN Wideband 15 W Pulsed Transistor in Plastic Package
	MAGX-000035-01500P	1Mb / 10P	GaN Wideband 15 W Pulsed Transistor in Plastic Package
	MAGX-002731-030L00	310Kb / 7P	GaN HEMT Pulsed Power Transistor
	MAGX-003135-030L00	908Kb / 8P	GaN HEMT Pulsed Power Transistor
	MAGX-000035-09000P	1Mb / 11P	GaN Wideband 90 W Pulsed Transistor in Plastic Package