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CXK5B81020J Datasheet(PDF) 4 Page - Sony Corporation

Part No. CXK5B81020J
Description  131072-word ´ 8-bit High Speed Bi-CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5B81020J/TM
• Read cycle
∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2).
This parameter is sampled and is not 100% tested.
• Write cycle
∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2).
This parameter is sampled and is not 100% tested.
tRC
tAA
tCO
tOE
tOH
tLZ
tOLZ
tHZ
tOHZ
12
3
3
0
0
0
12
12
6
6
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
Chip enable access time
Output enable to output valid
Output data hold time
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
Item
Symbol
Unit
-12
Min.
Max.
tWC
tAW
tCW
tDW
tDH
tWP
tAS
tWR
tOW
tWHZ
12
10
10
8
0
10
0
0
4
0
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write cycle time
Address valid to end of write
Chip enable to end of write
Data valid to end of write
Data hold from end of write
Write pulse width
Address set up time
Write recovery time
Output active from lend of write
Write to output in high Z
Item
Symbol
Unit
-12
Min.
Max.




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