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CXK5B81020J Datasheet(PDF) 3 Page - Sony Corporation

Part No. CXK5B81020J
Description  131072-word ´ 8-bit High Speed Bi-CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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– 3 –
CXK5B81020J/TM
I/O
Zo = 50
RL = 50
VL = 1.4V
I/O
3.3V
1179
868
5pF
2
Output load (1)
Output Load (2)
1
∗1. tLZ, tOLZ, tHZ, tOHZ, tOW, tWHZ
∗2. Including scope and jig capacitances
Fig. 1
Electrical Characteristics
DC Characteristics
(Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
∗ Vcc = 3.3V, Ta = 25°C
I/O Capacitance
(Ta = 25°C, f = 1MHz)
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test condition (Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C)
Input leakage current
Output leakage current
Average operating current
Standby current
Output high voltage
Output low voltage
ILI
ILO
ICC
ISB1
ISB2
VOH
VOL
VIN = GND to VCC
CE = VIH or
OE = VIH or
WE = VIL
VI/O = GND to VCC
Cycle: Min.
Duty = 100%
IOUT = 0mA
CE = VIL
VIN = VIH or VIL
CE
≥ VCC – 0.2V
VIN
≥ VCC – 0.2V or
VIN
≤ 0.2V
Cycle: Min.
Duty = 100%
CE = VIH
VIN = VIH or VIL
IOH = –2.0mA
IOL = 2.0mA
–10
–10
2.4
Item
Symbol
Conditions
Min.
Typ.∗
Max
Unit
Input capacitance
I/O capacitance
Item
Symbol
Conditions
Min.
Typ.
Max
Unit
CIN
CI/O
5
7
pF
pF
VIN = 0V
VI/O = 0V
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load conditions
VIH = 3.0V
VIL = 0.0V
tr = 2ns
tf = 2ns
1.4V
Fig. 1
Item
Condition
+10
+10
240
10
100
0.4
µA
µA
mA
mA
mA
V
V




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