STPS30H60C-Y datasheet(3/7 Pages) STMICROELECTRONICS

Part #	STPS30H60C-Y

Description	Automotive power Schottky rectifier

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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3 / 7 page

STPS30H60C-Y

Characteristics

Doc ID 18295 Rev 1

3/7

Figure 1.

Average forward power dissipation

versus average forward current (per

diode, all anode pins connected)

Figure 2.

Average forward current versus

ambient temperature (per diode, all

anode pins connected) (

δ = 0.5)

0

2

4

6

8

10

12

0

2

4

6

8

10

121416

1820

P

(W)

F(AV)

T

δ = t / T

p

t

p

I

(A)

F(AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

0

2

4

6

8

10

12

14

16

18

0

25

50

75

100

125

150

I

(A)

F(AV)

Rth(j-a) = Rth(j-c)

Rth(j-a) = 10 °C/W

T

(°C)

amb

T

δ = t / T

p

t

p

Figure 3.

Non repetitive surge peak forward

current versus overload duration

(maximum values)

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration

0

50

100

150

200

250

300

1.E-03

1.E-02

1.E-01

1.E+00

I

M

t

δ = 0.5

t(s)

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

I (A)

M

(per diode, all anode pins connected)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

t (s)

p

Single pulse

(per diode, all anode pins connected)

Figure 5.

Reverse leakage current versus

reverse voltage applied (per diode)

(typical values)

Figure 6.

Junction capacitance versus

reverse voltage applied (per diode)

(typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

5

10

15

20

25

30

35

40

45

50

55

60

V (V)

R

I (mA)

R

T = 25 °C

j

T = 50 °C

j

T = 75 °C

j

T = 125 °C

j

T = 150 °C

j

T = 100 °C

j

0.1

1.0

10.0

1

10

100

V (V)

R

C(nF)

F=1MHz

V= 30 mV

T= 25 °C

osc

RMS

j

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