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CXK582000TM Datasheet(PDF) 1 Page - Sony Corporation

Part No. CXK582000TM
Description  262144-word X 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK582000TM/YM/M -85LL/10LL
E94234-ST
262144-word
× 8-bit High Speed CMOS Static RAM
Description
The CXK582000TM/YM/M is a high speed CMOS
static RAM organized as 262144-words by 8 bits.
A
polysilicon
TFT
cell
technology
realized
extremely low stand-by current and higher data
retention stability.
Special feature are low power consumption and
high speed and board package line-up.
The CXK582000TM/YM/M is a suitable RAM for
portable equipment with battery back up.
Features
• Fast access time
(Access time)
-85LL
85ns (Max.)
-10LL
100ns (Max.)
• Low standby current
40µA (Max.)
• Low data retention current
24µA (Max.)
• Single +5V supply: 4.5V to 5.5V.
• Low voltage date retention : 2.0V (Min.)
• Broad package line-up
CXK582000TM/YM
8mm
× 20mm 32 pin
TSOP Package
CXK582000M
525mil 32 pin
SOP Package
Function
262144 word x 8 bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Preliminary
CXK582000TM
32 pin TSOP (PIastic)
CXK582000YM
32 pin TSOP (PIastic)
CXK582000M
32 pin SOP (PIastic)
Block Diagram
Memory
Matrix
2048
× 1024
I /O Gate
Column
Decoder
Row
Decoder
Buffer
Buffer
Buffer
I /O Buffer
VCC
GND
I/O1 I/O8
OE
WE
CE1
A10
A11
A9
A8
A15
A16
A14
A12
A7
A5
A6
A4
A3
A1
A0
A13
A2
CE2
A17
For the availability of this product, please contact the sales office.




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