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CXK582000TM Datasheet(PDF) 3 Page - Sony Corporation

Part No. CXK582000TM
Description  262144-word X 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK582000TM/YM/M
Input leakage current
Output leakage current
Operating power supply
current
ILI
ILO
ICC1
VIN = GND to VCC
CE1 = VIH or CE2 = VIL or
OE = VIH or WE = VIL
VI/O = GND to VCC
CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA
-85LLX
-10LLX
0 to +70°C
0 to +40°C
+25°C
–1
–1
—12
24
1.4
0.6
40
8
4
3
µA
mA
7
45
40
+1
+1
15
80
70
µA
µA
mA
mA
mA
Item
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Electrical Characteristics
• DC Characteristics
(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)
∗ VCC = 5V, Ta = 25°C
Average operating current
Output high voltage
Output low voltage
Standby current
ICC2
ICC3
ISB1
ISB2
VOH
VOL
Min. cycle
duty = 100%
IOUT = 0mA
Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1
≤ 0.2V
CE2
≥ Vcc – 0.2V
VIL
≤ 0.2V
VIH
≥ Vcc – 0.2V
CE1 = VIH or CE2 = VIL
IOL = 1.0mA
2.4
0.4
V
V
IOH = –1.0mA
CE2
≤ 0.2V
CE1
≥ Vcc – 0.2V
or
{
CE2
≥ Vcc – 0.2V
Supply voltage
Input high voltage
Input low voltage
Item
Symbol
Min.
Typ.
Max.
Unit
VCC
VIH
VIL
4.5
2.2
–0.3
5.0
5.5
VCC + 0.3
0.8
V
V
V
DC Recommended Operating Conditions
(Ta = 0 to +70°C, GND = 0V)
∗ VIL = –3.0V Min. for pulse width less than 50ns.




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