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CXK581000ATM Datasheet(PDF) 5 Page - Sony Corporation

Part No. CXK581000ATM
Description  131072-word x 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK581000ATM/AYM/AM/AP
55
55
55
30
25
25
• Read cycle (WE = "H")
Read cycle time
Address access time
Chip enable access time (CE1)
Chip enable access time (CE2)
Output enable to output valid
Output hold from address change
Chip enable to output in low Z (CE1, CE2)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE1, CE2)
Output disable to output in high Z (OE)
Item
Symbol
-55LL/55SL
-70LL/70SL
-10LL/10SL
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Item
Symbol
-55LL/55SL
-70LL/70SL
-10LL/10SL
Unit
Min.
Max.
Min.
Max.
Min.
Max.
tRC
tAA
tCO1
tCO2
tOE
tOH
tLZ1, tLZ2
tOLZ
tHZ1, tHZ2
tOHZ
55
15
10
5
70
15
10
5
70
70
70
40
25
25
100
100
100
50
35
35
100
15
10
5
ns
t
HZ1
,
tHZ2 and tOHZ are defined as the time required for outputs to turn to high impedance state and are not
referred to as output voltage levels.
• Write cycle
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE1, CE2)
Output active from end of write
Write to output in high Z
tWC
tAW
tCW
tDW
tDH
tWP
tAS
tWR
tWR1
tOW
tWHZ
55
50
50
25
0
40
0
0
0
10
25
70
60
60
30
0
50
0
0
0
10
25
30
100
70
70
40
0
70
0
0
0
10
ns
t
WHZ
is defined as the time required for outputs to turn to high impedance state and is not referred to as
output voltage level.




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