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CXK581000ATM Datasheet(PDF) 3 Page - Sony Corporation

Part No. CXK581000ATM
Description  131072-word x 8-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK581000ATM/AYM/AM/AP
Electrical Characteristics
• DC Characteristics
(VCC = 5V ±10%, GND = 0V, Ta = 0 to = +70°C)
Item
Symbol
Test conditions
Min.
Typ.∗1
Max.
Unit
Input leakage current
Output leakage current
Operating power
supply current
Average operating
current
Standby current
Output high
voltage
Output low
voltage
ILI
ILO
ICC1
ICC2
ICC3
ISB1
ISB2
VOH
VOL
VIN = GND to VCC
CE1 = VIH or CE2 = VIL or OE = VIH
or WE = VIL, VI/O = GND to VCC
CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA
Min. cycle
55LL/55SL
Duty = 100%
70LL/70SL
IOUT = 0mA
10LL/10SL
Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1
≤ 0.2V
CE2
≥ VCC – 0.2V
VIL
≤ 0.2V
VIH
≥ VCC – 0.2V
CE2
≤ 0.2V
or
CE1
≥ VCC – 0.2V
{
CE2
≥ VCC – 0.2V
CE1 = VIH or CE2 = VIL
IOH = –1.0mA
IOL = 2.1mA
–1
–1
2.4
1
1
15
90
70
60
20
20
4
2
12
2.4
1
3
0.4
7
45
40
35
10
0.7
0.3
0.6
µA
mA
µA
mA
V
0 to +70°C
LL∗2
0 to +40°C
+25°C
0 to +70°C
SL∗3
0 to +40°C
+25°C
∗1V
CC
= 5V, Ta = 25°C
∗2 For -55LL/70LL/10LL
∗3 For -55SL/70SL/10SL




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