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RFHA1000

DS120418

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Device Handling/Environmental Conditions

RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity,

high temperature environment.

GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation

boards.

DC Bias

saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than

the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi-

RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be

adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current

sidering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device

based on performance tradeoffs.

Mounting and Thermal Considerations

measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the

package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink

but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the

measurement, the thermal resistance is calculated.

In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the max-

imum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi-

ent to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC

power, it is possible to calculate the junction temperature of the device