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100A0R8BW150XT Datasheet(PDF) 1 Page - RF Micro Devices |
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100A0R8BW150XT Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 11 page 1 of 11 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Functional Block Diagram RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Ordering Information BiFET HBT RF IN Pin 2,3 RF OUT / VDS Pin 6,7 GND BASE VGS Pin 1 RFHA1003 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applica- tions such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semi- conductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An exter- nal output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB Power Added Efficiency 70% -40°C to 85°C Operating Temperature Large Signal Models Available Applications Pre-Driver for Multiband Wireless Infrastructure Transmitters Class AB Operation for Public Mobile Radio Power Amplifier Stage for Commercial Wireless Infrastructure General Purpose Tx Amplification Test Instrumentation Civilian and Military Radar DS120216 Package: AlN Leadless Chip Carrier / SO8 RFHA1003 30MHz to 512MHz, 9W GaN Wide- band Power Amplifier RFHA1003S2 2-Piece sample bag RFHA1003SB 5-Piece bag RFHA1003SQ 25-Piece bag RFHA1003SR 100 Pieces on 7” short reel RFHA1003TR7 750 Pieces on 7” reel RFHA1003PCBA-410 Fully assembled evaluation board 30MHz to 512MHz; 28V operation |
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