Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54513P/FP

8-UNIT 50mA TRANSISTOR ARRAY

V

mA

—

Parameter

—

—

—

—

0

0

2

0

V

mA

V

W

°C

°C

–0.5 ~ +40

50

–0.5 ~ +10

1.79(P)/1.10(FP)

–20 ~ +75

–55 ~ +125

Ratings

Symbol

Parameter

Conditions

Unit

40

30

8

0.2

Limits

min

typ

max

V

mA

V

V

Symbol

Unit

40

—

—

—

80

—

25

70

0.85

200

—

100

170

1.7

—

Symbol

Unit

Parameter

Test conditions

Limits

min

max

mV

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

ns

ns

—

—

65

1200

—

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

Collector-emitter voltage

Collector current

Input voltage

Power dissipation

Operating temperature

Storage temperature

Output, H

Current per circuit output, L

Ta = 25

°C, when mounted on board

Output voltage

Collector current

“H” input voltage

“L” input voltage

µA

°C

Collector-emitter breakdown voltage

Input current

DC amplification factor

Collector-emitter saturation voltage

Turn-on time

Turn-off time

PG

50

Ω

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

connections and input capacitance at probes

Measured device

INPUT

OUTPUT

ton

50%

50%

50%

INPUT

OUTPUT

50%

toff