< IGBT MODULES >

CM400C1Y-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2011

3

THERMAL RESISTANCE CHARACTERISTICS

Limits

Symbol

Item

Conditions

Min.

Typ.

Max.

Unit

Junction to case, per IGBT

-

-

56

K/kW

Thermal resistance

(Note.2)

Junction to case, per FWDi

-

-

95

K/kW

Case to heat sink, per 1/2 module,

Contact thermal resistance

(Note.2)

-

18

-

K/kW

MECHANICAL CHARACTERISTICS

Limits

Symbol

Item

Conditions

Min.

Typ.

Max.

Unit

Main terminals

M 6 screw

3.5

4.0

4.5

N·m

Mounting torque

Mounting to heat sink

M 6 screw

3.5

4.0

4.5

N·m

m

Weight

-

-

580

-

g

Flatness of base plate

-100

-

+100

μm

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).

the chips. Refer to the figure of chip location.

The heat sink thermal resistance should measure just under the chips.

5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.

6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

Y

X

+:Convex

-:Concave

3 mm

mounting side

mounting

side

mounting

side

*. DC current rating is limited by power terminals.

RECOMMENDED OPERATING CONDITIONS

Limits

Symbol

Item

Conditions

Min.

Typ.

Max.

Unit

(DC) Supply voltage

Applied across C1-E2

-

600

850

V

Gate (-emitter drive) voltage

Applied across G1-Es1/G2-Es2

13.5

15.0

16.5

V

External gate resistance

Per switch

0

-

10

Ω