Feb. 2009

2

±15V

Ω, Inductive load

IGBT part (1/6 module)

FWDi part (1/6 module)

Case temperature measured point is just under the chips

600

±20

150

300

150

300

520

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5

680

MITSUBISHI IGBT MODULES

CM150TU-12F

HIGH POWER SWITCHING USE

V

V

W

°C

°C

Vrms

N • m

N • m

g

A

A

1

20

2.2

—

41

2.7

1.5

—

120

100

350

250

150

—

2.6

0.24

0.47

—

42

mA

µA

nF

nC

µC

V

K/W

Ω

—

—

1.6

1.6

—

—

—

930

—

—

—

—

—

2.8

—

—

—

0.09

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

4.2

6V

V

ns

57

ns

Collector cutoff current

Gate leakage current

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Contact thermal resistance

Thermal resistance

External gate resistance

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Symbol

Parameter

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Weight

G-E Short

C-E Short

°C

Pulse

(Note 2)

°C

Pulse

(Note 2)

°C

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M5 screw

Mounting M5 screw

Typical value

Symbol

Parameter

Collector current

Emitter current

Torque strength

Conditions

Unit

Ratings

—

Unit

Typ.

Limits

Min.

Max.

—

°C, unless otherwise specified)

°C, unless otherwise specified)

Test conditions

°C

°C