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CM100RX-24A Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor

Part # CM100RX-24A
Description  HIGH POWER SWITCHING USE
Download  8 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM100RX-24A Datasheet(HTML) 7 Page - Mitsubishi Electric Semiconductor

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Jan. 2009
7
100
100
101
57
102
23
5
7
23
Conditions:
VCC = 600V
VGE =
±15V
IC, IE = 100A
Tj = 125
°C
Inductive load
101
57
102
23
5
7
23
Eoff
Eon
Err
100
101
100
102
5
7
103
2
3
5
7
2
3
5
7
2
3
Conditions:
VCC = 600V
VGE =
±15V
RG = 3.0
Ω
Tj = 25
°C
Inductive load
100
101
57
102
23
5
7
23
Irr
trr
101
100
102
5
7
103
2
3
5
7
2
3
5
7
2
3
100
10–1
101
5
7
102
2
3
5
7
2
3
5
7
2
3
Conditions:
VCC = 600V
VGE =
±15V
IC = 100A
Tj = 125
°C
Inductive load
Conditions:
VCC = 600V
VGE =
±15V
RG = 3.0
Ω
Tj = 125
°C
Inductive load
100
101
57
102
23
5
7
23
Eoff
Eon
Err
td(off)
td(on)
tr
tf
0
100 200 300 400 500 600 700
0
5
10
15
20
VCC = 400V
VCC = 600V
IC = 100A
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
10–523 5710–423 5710–323 5710–223 5710–123 57100 23 57101
Single pulse,
TC = 25
°C
Inverter IGBT part : Per unit base = Rth(j–c) = 0.20
K/W
Inverter FWDi part : Per unit base = Rth(j–c) = 0.29
K/W
Brake IGBT part
: Per unit base = Rth(j–c) = 0.35
K/W
Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.48
K/W
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
GATE RESISTANCE RG (
Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
GATE RESISTANCE RG (
Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TIME (s)
102
101
100
2
3
5
7
2
3
5
7
MITSUBISHI IGBT MODULES
CM100RX-24A
HIGH POWER SWITCHING USE


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