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STRH100N10 Datasheet(PDF) 6 Page - STMicroelectronics |
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STRH100N10 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 17 page Electrical characteristics STRH100N10 6/17 Doc ID 17486 Rev 6 Table 7. Switching times (pre-irradiation) Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 50 V, ID = 24 A, RG = 4.7 Ω, VGS = 12 V 23 29 79 33 29.5 40 99 64 36 52 119 95 ns ns ns ns Table 8. Source drain diode (pre-irradiation) (1) 1. Refer to the Figure 16. Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (2) 2. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 48 192 A A VSD (3) 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 48 A, VGS = 0 1.5 V trr (4) Qrr (4) IRRM (4) 4. Not tested in production, guaranteed by process. Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 48 A, di/dt = 100 A/µs VDD= 50 V, TJ = 25 °C 328 413 5 24 498 ns µC A trr (4) Qrr (4) IRRM (4) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 48 A, di/dt = 100 A/µs VDD= 50 V, TJ = 150 °C 400 500 7 28 600 ns µC A |
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