Electronic Components Datasheet Search |
|
STRH100N6 Datasheet(PDF) 6 Page - STMicroelectronics |
|
STRH100N6 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics STRH100N6 6/18 Doc ID 18353 Rev 3 Table 7. Pre-irradation switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 30 V, ID = 40 A, RG = 4.7 Ω, VGS = 12 V 22 90 62 45 28 115 86 69 34 140 110 93 ns ns ns ns Table 8. Pre-irradation source drain diode(1) 1. Refer to Table 16: Source drain diode. Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (2) 2. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 80 320 A A VSD (3) 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 1.1 V trr (4) Qrr (4) IRRM (4) 4. Not tested in production, guaranteed by process. Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD= 48 V, Tj = 25 °C 307 384 4.7 24.6 461 ns µC A trr (4) Qrr (4) IRRM (4) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD= 48 V, Tj = 150 °C 370 462.4 6.5 28.3 555 ns µC A |
Similar Part No. - STRH100N6 |
|
Similar Description - STRH100N6 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |