Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

STRH40P10 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STRH40P10
Description  Rad-Hard P-channel 100 V, 34 A Power MOSFET
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STRH40P10 Datasheet(HTML) 5 Page - STMicroelectronics

  STRH40P10 Datasheet HTML 1Page - STMicroelectronics STRH40P10 Datasheet HTML 2Page - STMicroelectronics STRH40P10 Datasheet HTML 3Page - STMicroelectronics STRH40P10 Datasheet HTML 4Page - STMicroelectronics STRH40P10 Datasheet HTML 5Page - STMicroelectronics STRH40P10 Datasheet HTML 6Page - STMicroelectronics STRH40P10 Datasheet HTML 7Page - STMicroelectronics STRH40P10 Datasheet HTML 8Page - STMicroelectronics STRH40P10 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 18 page
background image
STRH40P10
Electrical characteristics
Doc ID 18354 Rev 6
5/18
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed.
Pre-irradiation
Table 5.
Pre-irradiation on/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
80% BVDss
10
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = 20 V
VGS = -20 V
-100
100
nA
nA
BVDSS
(1)
1.
This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).
Drain-to-source breakdown
voltage
VGS = 0, ID = 1 mA
100
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
2
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 12 V; ID = 17 A
0.060
0.075
Table 6.
Pre-irradiation dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
(1)
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGS = 0, VDS = 25 V,
f=1 MHz
3710
510
204
4640
635
255
5570
760
306
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-to-source charge
Gate-to-drain (“Miller”)
charge
VDD = 50 V, ID = 34 A,
VGS=12 V
130
14
32
162
18
40
194
22
48
nC
nC
nC
RG
(1)
1.
Not tested, guaranteed by process.
Gate input resistance
f=1MHz gate DC bias=0
test signal level=20mV
open drain
1.5
Table 7.
Pre-irradiation switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 50 V, ID = 17 A,
RG = 4.7 Ω, VGS = 12 V
15
19
68
34
24
31
129
46
33
43
190
58
ns
ns
ns
ns


Similar Part No. - STRH40P10

ManufacturerPart #DatasheetDescription
logo
STMicroelectronics
STRH40N25FSY1 STMICROELECTRONICS-STRH40N25FSY1 Datasheet
229Kb / 13P
   N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET
STRH40N25FSY3 STMICROELECTRONICS-STRH40N25FSY3 Datasheet
229Kb / 13P
   N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET
STRH40N6 STMICROELECTRONICS-STRH40N6 Datasheet
444Kb / 16P
   Rad-Hard N-channel 60 V, 30 A Power MOSFET
More results

Similar Description - STRH40P10

ManufacturerPart #DatasheetDescription
logo
STMicroelectronics
STRH12P10 STMICROELECTRONICS-STRH12P10 Datasheet
421Kb / 15P
   Rad-Hard 100 V, 12 A, P-channel Power MOSFET
May 2022 Rev 9
STRH8N10 STMICROELECTRONICS-STRH8N10 Datasheet
501Kb / 18P
   Rad-Hard N-channel 100 V, 6 A Power MOSFET
STRH100N10 STMICROELECTRONICS-STRH100N10 Datasheet
474Kb / 17P
   Rad-Hard 100 V, 48 A N-channel Power MOSFET
STRH100N6 STMICROELECTRONICS-STRH100N6 Datasheet
408Kb / 18P
   Rad-Hard N-channel, 60 V, 80 A Power MOSFET
STRH40N6 STMICROELECTRONICS-STRH40N6 Datasheet
444Kb / 16P
   Rad-Hard N-channel 60 V, 30 A Power MOSFET
logo
Intersil Corporation
JANSR2N7404 INTERSIL-JANSR2N7404 Datasheet
45Kb / 8P
   15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7411 INTERSIL-JANSR2N7411 Datasheet
45Kb / 8P
   2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7403 INTERSIL-JANSR2N7403 Datasheet
45Kb / 8P
   22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET
logo
Sensitron
SRADM1006 SENSITRON-SRADM1006 Datasheet
152Kb / 2P
   HERMETIC RAD HARD POWER MOSFET
SRADM1008 SENSITRON-SRADM1008 Datasheet
153Kb / 2P
   HERMETIC RAD HARD POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com