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STRH40P10 Datasheet(PDF) 7 Page - STMicroelectronics

Part # STRH40P10
Description  Rad-Hard P-channel 100 V, 34 A Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STRH40P10 Datasheet(HTML) 7 Page - STMicroelectronics

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STRH40P10
Radiation characteristics
Doc ID 18354 Rev 6
7/18
3
Radiation characteristics
The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to radiative environments. Every manufacturing lot is tested for total ionizing dose
(irradiation done according to the ESCC 22900 specification, window 1) using the TO-3
package. Both pre-irradiation and post-irradiation performances are tested and specified
using the same circuitry and test conditions in order to provide a direct comparison.
(Tamb= 22 ± 3 °C unless otherwise specified).
Total dose radiation (TID) testing
One bias conditions using the TO-3 package:
–VGS bias: + 20 V applied and VDS= -100 V during irradiation
The following parameters are measured (see
Table 9, Table 10 and Table 11):
before irradiation
after irradiation
after 24 hrs @ room temperature
after 168 hrs @ 100 °C anneal
Table 9.
Post-irradiation on/off states @ TJ= 25 °C, (Co60
γ rays 100 K Rad(Si))
Symbol
Parameter
Test conditions
Drift values
Unit
IDSS
Zero gate voltage drain current
(VGS = 0)
80% BVDss
+1
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = 12 V
VGS = -12 V
1.5
-1.5
µA
BVDSS
Drain-to-source breakdown
voltage
VGS = 0, ID = 1 mA
+5%
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
+150%
V
RDS(on)
Static drain-source on resistance
VGS = 10 V; ID = 20 A
-4% / +35%
Table 10.
Dynamic post-irradiation @ TJ= 25 °C, (Co60
γ rays 100 K Rad(Si)) (1)
1.
Parameter not measured after irradiation but guaranteed by the results obtained during the evaluation
phase that proves this parameter is directly correlated to the VGS(th) shift.
Symbol
Parameter
Test conditions
Drift values
Unit
Qg
Total gate charge
IG = 1 mA, VGS = 12 V,
VDS = 50 V, IDS = 20 A
-15% / +5%
nC
Qgs
Gate-source charge
-5% / +200%
Qgd
Gate-drain charge
-10% / +100%


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