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STRH8N10 Datasheet(PDF) 1 Page - STMicroelectronics |
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STRH8N10 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 18 page November 2011 Doc ID 010029 Rev 2 1/18 18 STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features ■ Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened Applications ■ Satellite ■ High reliability Description This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. Figure 1. Internal schematic diagram Note: Contact ST sales office for information about the specific conditions for product in die form and for other packages. VDSS ID RDS(on) Qg 100 V 6 A 0.30 Ω 22 nC TO-39 Table 1. Device summary Order code ESCC part number Quality level Package Lead finish Mass (g) Temp. range EPPL STRH8N10N1 - Engineering model TO-39 Gold 1.2 -55 to 150°C - STRH8N10NG TBD ESCC flight Target www.st.com |
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