2N5551HR datasheet(2/10 Pages) STMICROELECTRONICS

Part #	2N5551HR

Description	Hi-Rel NPN bipolar transistor 160 V - 0.5 A

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical ratings

2N5551HR

2/10

Doc ID 16935 Rev 3

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCBO

Collector-base voltage (IE = 0)

180

V

VCEO

Collector-emitter voltage (IB = 0)

160

V

VEBO

Emitter-base voltage (IC = 0)

6

V

IC

Collector current

for 2N5551HR

for SOC5551HRB

0.6

0.5

A

PTOT

Total dissipation at Tamb ≤ 25 °C

for 2N5551HR

for SOC5551HRB

for SOC5551HRB (1)

Total dissipation at Tc ≤ 25 °C

for 2N5551HR

1.

When mounted on a 8 x 10 x 0.6 mm ceramic substrate.

0.36

0.58

1.2

W

TSTG

Storage temperature

-65 to 200

°C

TJ

Max. operating junction temperature

200

°C

Table 3.

Thermal data for through-hole package

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case

__

max

146

°C/W

RthJA

Thermal resistance junction-ambient

__

max

486

°C/W

Table 4.

Thermal data for SMD package

Symbol

Parameter

Value

Unit

RthJA

Thermal resistance junction-ambient

__

max

486

°C/W

Thermal resistance junction-ambient (1) __

max

1.

When mounted on a 8 x 10 x 0.6 mm ceramic substrate.

302

°C/W

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