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2N2219AHR Datasheet(PDF) 3 Page - STMicroelectronics

Part No. 2N2219AHR
Description  Hi-Rel NPN bipolar transistor 40 V, 0.8 A
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N2219AHR
Electrical characteristics
Doc ID 15294 Rev 3
3/9
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 60 V
VCB = 60 V, Tamb = 150 °C
-
10
10
nA
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 3 V
-
10
nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 10 µA
75
-
V
V(BR)CEO
(1)
1.
Pulsed duration = 300 µs, duty cycle
≤2%
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10 mA
40
-
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10 µA
6
-
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
-
0.3
1
V
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 150 mA, IB = 15 mA
-
1.2
V
hFE
(1)
DC current gain
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
Tamb = -55 °C
75
100
40
35
-
300
hfe
Small signal current
gain
VCE = 20 V, IC = 20 mA
f = 100 MHz
2.5
-
CCBO
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz
≤ f ≤1 MHz
-8
pF
ton
Turn-on time
VCC = 30 V, IC = 150 mA
IB1 = 15 mA
-35
ns
toff
Turn-off time
VCC = 30 V, IC = 150 mA
IB1 = -IB2 = 15 mA
-
300
ns




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