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IPP50R380CE Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IPP50R380CE Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 20 page 500V CoolMOS TM CE 10 Application Note AN 2012-04 V1.0 April 2012 The MOSFET channel is turned ON and diverts a portion of the current through the channel away from the body diode, that is still forward conducting (MOSFET can conduct current in both directions). This lower current flowing through the body diode will reduce the generation of minority carriers but will not stop it. The external circuitry reverses the current flow through the device -> small amount of reverse current flows in body diode (small due to the very weak voltage generated by very low current flowing in the low resistive channel, especially at light load operation). Some minority carriers will be removed from the p-n-junction, but not all due to a conduction period that is short in relation to the intrinsic carrier lifetime. If the MOSFET completely turns ON the current will be completely diverted to the channel, but if the MOSFET turns OFF when there are still minority carriers in the body diode the following happens: The MOSFET will begin to block voltage imposing a higher reverse voltage on the body diode, with high dv/dt. The application of high reverse voltage on the body diode will sweep the remaining carriers across the junction very quickly. Minority carriers in the nepi region are swept towards the p+ body. -> if this current (flowing into RB, represented in Figure 5) reaches a magnitude sufficient to activate the intrinsic bipolar transistor, second breakdown will occur destroying the MOSFET. In a conventional MOSFET the hole current, fed by reverse recovery charge, flow laterally into the p doped region crossing the area below the n region before they reach the top side of the device below the gate electrode: so this current flows through RB of the parasitic bipolar structure, with the risk of forward biasing of npn-junction and consequent triggering of parasitic BJT. |
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