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IPD50R950CE Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPD50R950CE Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 20 page 500V CoolMOS TM CE 3 Application Note AN 2012-04 V1.0 April 2012 Table of contents 1 Introduction..................................................................................................................................................4 1.1 Features and Benefits ........................................................................................................................4 1.2 Applications (Target Market)..............................................................................................................5 2 Superjunction (SJ) Principle ......................................................................................................................5 2.1 General Description ...........................................................................................................................5 2.2 Superjunction Benefit of 500V CE .....................................................................................................7 2.2.1 Switching Speed ............................................................................................................................ 7 2.2.2 BJT (Bipolar Junction Transistor)-Effect ........................................................................................ 9 3 Technology Parameters............................................................................................................................11 3.1 Gate Charge (Qg) .............................................................................................................................11 3.2 Energy Stored in Output Capacitance (Eoss)....................................................................................12 4 Measurement Results ...............................................................................................................................13 4.1 Efficiency in CCM PFC ....................................................................................................................13 4.2 Hard Commutation on Conducting Body Diode...............................................................................15 5 Design Guideline for Using 500V CE .......................................................................................................16 5.1 Minimum External Gate Resistor (RG,ext) .........................................................................................16 5.2 Paralleling of 500V CE.....................................................................................................................16 5.3 Safe Operation after Protection Mode .............................................................................................17 6 Portfolio ......................................................................................................................................................19 7 References .................................................................................................................................................20 |
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