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IPB057N06N Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPB057N06N Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 2 page Product Brief Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2011 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B152-H9681-X-X-7600-DB2012-0002 Date: 07 / 2012 Attention pleAse! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warran- ties and liabilities of any kind, including without limita- tion warranties of non-infringement of intellectual property rights of any third party. informAtion For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). WArnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reason- able to assume that the health of the user or other persons may be endangered. New OptiMOS™ 40V and 60V Shrink Your Design and Boost Efficiency Infineon is the first semiconductor company to introduce a 1mΩ 40V MOSFET in a SuperSO8 package. This cuts the number of MOSFETs in the Synchronous Rectification of a 1000W server power supply by half. No more paralleling is needed and power density can be increased drastically. A monolithic integrated Schottky-like diode reduces the reverse recovery charge (Q rr) in the relevant current range for Synchronous Rectification. This leads to lower conduction losses and higher efficiency in the system. Furthermore a drastic reduction of the voltage overshoot reduces the need for a snubber circuit and saves engineering cost and effort. Performance comparison of Best in class new OptiMOS™ 60V vs. next best competitor Product Portfolio New OptiMOS™ SuperSO8 S308 TO-220 I²PAK D2PAK D2PAK 7pin DPAK 1-2 mΩ BSC016N06NS IPI020N06N IPB010N06N BSC014N06NS IPB014N06N 2-4 mΩ BSC028N06NS IPP020N06N IPI029N06N IPB026N06N BSC039N06NS IPP029N06N IPD025N06N 4-6 mΩ BSZ042N06NS IPP040N06N IPB057N06N 6-8 mΩ IPP060N06N IPD053N06N 1-2 mΩ BSC010N04LS BSC010N04LSI* BSC014N04LS BSC014N04LSI* 2-3 mΩ BSZ023N04LS *Monolithic integrated Schottky like diode 85 86 87 88 89 90 200 300 400 500 600 Output Power [W] 50 52 54 56 58 50 150250 350450 550 Output Power [W] Infineon Competitor Infineon Competitor optimos™ 60V in the secondary side rectification of a 750W/12V server power supply leads to 0.3% higher system efficiency and reduces the voltage overshoot up to 2V. |
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