IPA50R190CE datasheet(11/20 Pages) INFINEON

Part #	IPA50R190CE

Description	500V Superjunction MOSFET for Consumer and Lighting Applications

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Manufacturer	INFINEON [Infineon Technologies AG]

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11 / 20 page

500V CoolMOS

TM CE

11

Application Note AN 2012-04

V1.0 April 2012

Figure 5: BJT-Effect

As visible in Figure 5 (right) in a CoolMOS

TM the hole current flows upwards through the p doped column,

before it reaches the metalized contact, but no lateral current will pass through the p doped well and

therefore no current flows through RB reducing the possibility of triggering the BJT-Effect to nearly zero.

Now that the basics of the SJ MOSFET have been discussed, this paper is going to continue with technology

parameters and their influence on the applications in the specific topologies.

3

Technology Parameters

3.1

Gate Charge (Qg)

One of the most important improvements is the Qg reduction which brings benefits especially in light load

conditions due to reduced driving losses. In general the 500V CE has about 40% Qg reduction in comparison

to an comparable standard MOSFET over the whole RDS(on) range. Figure 6 shows the Qg in nC of the 500V

CE against a standard MOSFET over the RDS(on),max range from 190mΩ to 950mΩ.

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