IS31LT3135

Integrated Silicon Solution, Inc. — www.issi.com

Rev.A, 11/08/2011

3

ABSOLUTE MAXIMUM RATINGS

-

0.3V ~ +6.5V

UV, Iset, Sub, Main

-0.3V to 6.5V

+150°C

Storage temperature range, Tstg

-

65°C ~ +150°C

ESD(human body mode)

4kV

500mA

300mA

-

40°C ~ +85°C

Note:

1.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the

specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Condition

Min

Typical

Max

Unit

Input voltage

2.7

5.5

V

Icc

Quiescent current

Vcc=2.7V~5.5V,no load，

5.5V>Vuv>1.4V

250

320

μA

Iratio

8000

1.2

V

Iaccuracy

Current accuracy of main

LED

Vcc = 2.7V ~ 5.5V，Vmain=0.5V

±5

%

Vdp

Main channel current

source dropout voltage

Rset=47K,Iout=204mA

0.2

V

Rsub

Sub-channel “ON”

resistance

Vcc=2.7V~5.5V

2.0

ohm

Undervoltage threshold of

UV pin

Switch from

main-LED to

sub-LED when

VUV sweeps

from high

voltage to low

voltage

IS31LT3135-V1

1.13

1.17

121

V

IS31LT3135-V2

1.19

1.23

1.26

Comparator hysteresis of

UV pin(Upper threshold -

Undervoltage threshold)

Switch from sub-LED to

main-LED when VUV

sweeps from low voltage to high

voltage(Upper threshold); Switch

from main-LED to sub-LED when

VUV sweeps from high voltage

to low voltage(Undervoltage

threshold)

80

mV

Thermal protection

Threshold

160

℃

Junction to ambient

SOP-8

80

°C/W