IS64WV12816EDBLL datasheet(8/14 Pages) ISSI

Part #	IS64WV12816EDBLL

Description	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

09/29/2011

IS61/64WV12816EDBLL

WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (OverOperatingRange)

-8

-10

-20

Symbol

Parameter

Min. Max.

Min.

Max.

Unit

twc

WriteCycleTime

8—

10—

20—

ns

tsce

CE

toWriteEnd

6.5—

8—

12—

ns

taw

AddressSetupTime

6.5—

8—

12—

ns

toWriteEnd

tHa

AddressHoldfromWriteEnd

0—

ns

tsa

AddressSetupTime

0—

ns

tPwb

LB

,UBValidtoEndofWrite

6.5—

8—

12—

ns

tPwe1

WE

PulseWidth

6.5—

8—

12—

ns

tPwe2

WE

PulseWidth(OE=LOW)

8—

10—

17—

ns

tsd

DataSetuptoWriteEnd

5—

6—

9—

ns

tHd

DataHoldfromWriteEnd

0—

ns

tHzwe(2)

WE

LOWtoHigh-ZOutput

—3.5

—5

—9

ns

tLzwe(2)

WE

HIGHtoLow-ZOutput

2—

3—

ns

Notes:

1. TestconditionsandoutputloadingconditionsarespecifiedintheACTestConditionsandACTestLoads(Figure1).

2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

3. TheinternalwritetimeisdefinedbytheoverlapofCELOWandUBorLB,andWELOW.Allsignalsmustbeinvalidstates

toinitiateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedto

therisingorfallingedgeofthesignalthatterminatesthewrite.Shadedareaproductindevelopment

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