MGY25N120

3

Motorola TMOS Power MOSFET Transistor Device Data

Figure 1. Output Characteristics, TJ = 25°C

Figure 2. Output Characteristics, TJ = 125°C

Figure 3. Transfer Characteristics

Figure 4. Collector–to–Emitter Saturation

Voltage versus Junction Temperature

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 5. Capacitance Variation

Figure 6. Gate–to–Emitter Voltage versus

Total Charge

VGE = 20 V

TJ = 25°C

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

12.5 V

17.5 V

15 V

10 V

45

30

0

8

4

0

2

6

60

15

7

3

1

5

75

VGE = 20 V

TJ = 125°C

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

12.5 V

17.5 V

15 V

10 V

45

30

0

8

4

0

2

6

60

15

7

3

1

5

75

VCE = 10 V

250

µs PULSE WIDTH

TJ = 125°C

VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)

70

20

10

0

16

8

6

4

10

25

°C

VGE = 15 V

250

µs PULSE WIDTH

TJ, JUNCTION TEMPERATURE (°C)

1

150

50

0

– 50

100

IC = 20 A

40

15 A

12

10 A

30

50

2

3

4

60

14

GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Coes

10000

10

25

20

15

5

0

10

TJ = 25°C

Cres

Cies

100

1000

Qg, TOTAL GATE CHARGE (nC)

16

8

0

70

20

0

4

QT

Q1

Q2

TJ = 25°C

IC = 25 A

60

40

12

14

6

2

10

65

15

55

35

10

50

30

5

45

25

VCE = 0 V