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TK20X60U Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TK20X60U Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TK20X60U 2010-09-15 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK20X60U Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.175 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 20 Drain current Pulse (Note 1) IDP 40 A Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 144 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.12 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 2-9F1C Weight: 0.74 g (typ.) 1 3 4 |
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