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TK15X60U Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TK15X60U Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TK15X60U 2010-08-20 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 7.5 A ⎯ 0.25 0.31 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 7.5 A 2.1 8.5 ⎯ S Input capacitance Ciss ⎯ 950 ⎯ Reverse transfer capacitance Crss ⎯ 47 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 2300 ⎯ pF Rise time tr ⎯ 37 ⎯ Turn-ON time ton ⎯ 80 ⎯ Fall time tf ⎯ 8 ⎯ Switching time Turn-OFF time toff Duty ≤ 1%, tw = 10 μs ⎯ 105 ⎯ ns Total gate charge Qg ⎯ 17 ⎯ Gate-source charge Qgs ⎯ 10 ⎯ Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 15 A ⎯ 7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 15 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 30 A Forward voltage (diode) VDSF IDR = 15 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 530 ⎯ ns Reverse recovery charge Qrr IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 9.0 ⎯ μC Marking K15X60U Lot No. Part No. (or abbreviation code) Note 4 Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment RL = 40 Ω 0 V 10 V VGS VDD ≈ 300 V ID = 7.5 A VOUT 50 Ω |
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