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TK6A55DA Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TK6A55DA
Description  Switching Regulator Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TK6A55DA Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TK6A55DA
2010-08-27
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±1
μA
Drain cut-off current
IDSS
VDS = 550 V, VGS = 0 V
10
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
550
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.4
4.4
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.8 A
1.25
1.48
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.8 A
0.8
3.2
S
Input capacitance
Ciss
600
Reverse transfer capacitance
Crss
4
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
70
pF
Rise time
tr
18
Turn-on time
ton
40
Fall time
tf
8
Switching time
Turn-off time
toff
Duty
≤ 1%, tw = 10 μs
55
ns
Total gate charge
Qg
12
Gate-source charge
Qgs
7
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 5.5 A
5
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
5.5
A
Pulse drain reverse current
(Note 1)
IDRP
22
A
Forward voltage (diode)
VDSF
IDR = 5.5 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1000
ns
Reverse recovery charge
Qrr
IDR = 5.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
6
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
K6A55DA
Lot No.
Part No.
(or abbreviation code)
Note 4
RL = 70 Ω
0 V
10 V
VGS
VDD ≈ 200 V
ID = 2.8 A VOUT
50
Ω


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