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TK6A50D Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TK6A50D Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page TK6A50D 2010-06-03 5 0.001 0.1 0.01 1 10 100 10 1000 100 100 μs * 1 ms * 0.1 1 0.01 0.00001 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 T PDM t Duty = t/T Rth (ch-c) = 3.57 °C/W Duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 RG = 25 Ω VDD = 90 V, L = 6.8 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit Waveform IAR BVDSS VDD VDS −15 V 15 V EAS – Tch Channel temperature (initial) Tch (°C) rth – tw Pulse width tw (s) SINGLE PULSE * Single pulse Tc=25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) SAFE OPERATING AREA Drain-source voltage VDS (V) DC operation Tc = 25°C 200 160 120 80 40 0 25 50 75 100 125 150 VDSS max |
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